? 2011 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 1.4 a i dm t c = 25 c, pulse width limited by t jm 3.0 a i a t c = 25 c 1.4 a e as t c = 25 c 100 mj dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c63w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force (to-263) 10..65/2.2..14.6 n/lb. m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-252 0.35 g to-263 2.50 g to-220 3.00 g ds99737b(08/11) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 50 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 50 na i dss v ds = v dss , v gs = 0v 5 a t j = 125 c 150 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 11.8 polar tm power mosfets n-channel enhancement mode avalanche rated ixty1r4n100p IXTA1R4N100P ixtp1r4n100p v dss = 1000v i d25 = 1.4a r ds(on) 11.8 to-252 (ixty) g s d (tab) g = gate d = drain s = source tab = drain to-263 aa (ixta) g s d (tab) g d s to-220ab (ixtp) d (tab) features z international standard packages z low r ds(on) and q g z avalanche rated z low package inductance z fast intrinsic rectifier advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls
ixys reserves the right to change limits, test conditions, and dimensions. ixty1r4n100p IXTA1R4N100P ixtp1r4n100p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 0.70 1.10 s c iss 450 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 27 pf c rss 6 pf t d(on) 25 ns t r 35 ns t d(off) 65 ns t f 28 ns q g(on) 17.8 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 2.8 nc q gd 9.9 nc r thjc 2.0 c/w r thcs to-220 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max i s v gs = 0v 1.4 a i sm repetitive, pulse width limited by t jm 4.2 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr i f = 1.4a, -di/dt = 100a/ s, v r = 100v, v gs = 0v 750 ns note 1: pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain to-220 (ixtp) outline to-263 (ixta) outline to-252 (ixty) outline pins: 1 - gate 2,4 - drain 3 - source dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 3 - source resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 30 (external)
? 2011 ixys corporation, all rights reserved ixty1r4n100p IXTA1R4N100P ixtp1r4n100p fig. 1. output characteristics @ t j = 25oc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 2 4 6 8 10 12 14 16 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 2. extended output characteristics @ t j = 25oc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 3. output characteristics @ t j = 125oc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 25 30 35 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on) normalized to i d = 0.7a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 1.4a i d = 0.7a fig. 5. r ds(on) normalized to i d = 0.7a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixty1r4n100p IXTA1R4N100P ixtp1r4n100p ixys ref: t_1r4n100p (2a)4-03-08-a fig. 7. input admittance 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 3.03.54.04.55.05.56.06.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 0.4 0.8 1.2 1.6 2 2.4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 024681012141618 q g - nanocoulombs v gs - volts v ds = 500v i d = 0.7a i g = 10ma fig. 11. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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